| PART |
Description |
Maker |
| 82S147A 82S147AN N82S147 N82S147AA N82S147AN N82S1 |
4K-BIT TTL BIPLOAR PROM
4K Bit TTL Bipolar PROM
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AM27S23 AM27S23_B2A AM27S23_BRA AM27S23_BSA AM27S2 |
DIODE ZENER SINGLE 500mW 20Vz 6.2mA-Izt 0.05 0.1uA-Ir 15 SOD-123 3K/REEL 256 X 8 OTPROM, 40 ns, CDIP20
DIODE ZENER SINGLE 200mW 20Vz 6.2mA-Izt 0.05 0.1uA-Ir 15 SOD-323 3K/REEL 256 X 8 OTPROM, 40 ns, CDFP20
2048-BIT (256X8) BIPOLAR PROM 256 X 8 OTPROM, 45 ns, CQCC20
JT 28C 26#20 2#16 PIN PLUG
|
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| AM27S19A |
256-Bit Dipolar PROM
|
AMD
|
| AM29LV400B-90REI AM29LV400B-90RFI AM29LV400T-90RFC |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO44
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
|
| BR34L02FV-W |
256 bit Electrically Erasable PROM
256? bit Electrically Erasable PROM
|
Rohm CO.,LTD.
|
| UPB429 UPB429-1 UPB429-2 UPB429-3 |
2048 x 8-BIT BIPOLA TTL PROM
|
NEC
|
| AM27S21APC |
Ic-1k-bit Bipolar Prom
|
AMD
|
| 63S280 |
(63S28x) High Performance 256 x 8 PROM TiW PROM
|
Monolithic Memories
|
| 63S281 |
High Performance 256 x 8 PROM TiW PROM
|
AMD
|
